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| MLN2030F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: B OD C E .060 x 45 CHAMFER The ASI MLN2030F is Designed for G H J F I K P MN FEATURES: * * * OmnigoldTM Metalization System L DIM A B MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC O C D E F G H I J K L M N P 500 mA 20 V --- W -65 OC to +200 OC -65 C to +200 C 17.0 OC/W O ORDER CODE: ASI10632 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEO hFE COB PG IC = 1 mA IC = 5 mA IE = 1 mA VCE = 18 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 50 20 3.5 1.0 UNITS V V V mA --pF dB VCE = 5.0 V VCB = 28 V VCE = 18 V ICQ = 220 mA IC = mA f = 1.0 MHz POUT = 1.0 W f = 2.0 GHz 15 120 5.0 7.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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